A new form of infrared (IR) imaging bolometer suitable for radiometric imaging of high temperature plasmas is presented, offering several key advantages: instantaneous power readout via an IR camera (within thermal timescale constraints), increased robustness and uniformity as compared to a traditional imaging foil, ease of calibration, and pixelated imaging. These advantages are accomplished with the use of silicon microfabrication techniques and vertically aligned carbon nanotubes. An additional feature of this approach is the ability to make a multicolor pixel array, which we call the red–green–blue imaging bolometer sensor. By customizing a pattern of individual neighboring pixels with different radiation absorption characteristics, imaging bolometers for multiple energy bands are possible. Since the thin film architecture for each pixel determines its respective photon stopping power, individual pixels can be designed to absorb varying levels of photon energy depending upon the presence of an optical absorber and a thin film stack of varying thickness and atomic number (Z). As a result, we can image three (or more) different energy bands of plasma radiation simultaneously, with hundreds, if not thousands, of lines of sight.
Работа посвящена деятельности одного из структурных подразделений ИЗМИРАН связанного с созданием современных магнитоизмерительных приборов предназначенных для проведения научных исследований в различных условиях и средах. Рассмотрен более чем десятилетний период деятельности сотрудников, показаны созданные уникальные приборы разных типов и конструкций, а также показаны некоторые возможности исследований с их использованием. Приводятся публикации по созданным приборам и их применению.
icrobolometers are infrared detectors whose resistance changes with temperature. The infrared radiation from objects located at various temperatures falls on top of a microbolometer surface, causing its temperature to increase, which in turn changes the bolometer’s resistance. While amorphous silison (a-Si) and vanadium oxide (VOx) are the two most widely used microbolometer materials for commercial applications, several other new materials, such as doped-VOx, germanium-based alloys, niobium oxide, titanium oxide, carbon nanotubes, and graphene, have also shown potentials. This review provides a thorough analysis of conventional and potential new materials used in the sensing layer of microbolometers. Furthermore, it covers the atomic compositions of each material, their deposition and synthesis processes, and their electro-optical and other properties relevant to microbolometer applications. This periodic analysis also provides in-depth descriptions of the figures of merit for microbolometers made from each of the materials used so far. These figures of merit include the temperature coefficient of resistance, responsivity, detectivity, and noise equivalent temperature difference (NETD), among others. The performance of microbolometers made of each of the materials is also compared
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) detectors, which operate within the 3–14 μm wavelength range, have been extensively employed in various fields, including military, space exploration, environmental monitoring, biomedicine, and chemical analysis. While thermal detectors are commonly used, their limitations in sensitivity and response time render them less suitable for next-generation MWIR and LWIR applications. These advanced applications necessitate the use of narrow bandgap semiconductor-based photodetectors, which offer tunable optoelectronic properties and higher specific detectivity compared to thermal detectors. In this review, we provide a detailed analysis of the operational principles and manufacturing strategies of infrared photodetectors based on narrow bandgap semiconductors, which enable high-performance detection in the MWIR and LWIR regions. Our focus is specifically on scalable fabrication of MWIR and LWIR photodetectors, emphasizing devices with active areas ranging from millimeters to centimeters. Researches on large-scale fabrication of infrared photodetectors using quantum dots, two-dimensional (2D) van der Waals (vdW) materials, and three-dimensional (3D) bulk semiconductors are investigated. Finally, we summarize the remaining challenges in developing scalable narrow bandgap semiconductor-based MWIR and LWIR photodetectors for commercialization.
Рассматривается задача повышения точности и быстродействия систем автоматической фокусировки в оптико-электронных системах (ОЭС). Показано, что применение классических ПИД-регуляторов ограничено нелинейностями приводов и нестационарностью наблюдаемых сцен. Предложена структура адаптивной системы, использующей нечеткую логику для динамической настройки коэффициентов ПИДрегулятора. Обоснован выбор функции оценки контрастности методом Тененграда и аппаратной платформы Orange Pi 6 Plus для реализации алгоритмов в реальном времени. Прогнозируется снижение перерегулирования на 20–30 % и времени переходного процесса на 25–35 % при замене классического ПИД-регулятора на нечёткий.
Near-infrared organic photodetectors (NIR-OPDs) are emerging as versatile platforms for flexible and low-cost optical sensing, yet achieving high-performance in the NIR region remains difficult remains challenging due to intrinsic trade-offs at both the material and device levels, due to the inherent balance required among bandgap narrowing, exciton dissociation, charge transport, and dark-current suppression. This review provides a concise overview of OPD operating mechanisms and the performance metrics governing sensitivity and noise. We highlight recent molecular-engineering strategies—core fluorination, asymmetric π-bridge design, fused-ring rigidification, and polymer backbone/side-chain tuning—that effectively enhance intermolecular ordering, reduce energetic disorder, and extend NIR absorption. Progress in all-polymer detectors and ambipolar phototransistors further demonstrates improved stability and broadened detection capability. Additionally, emerging applications, including NIR communication, biosignal monitoring, flexible imaging, and biometric recognition, showcase the expanding utility of NIR-OPDs. Remaining challenges include pushing detection beyond 1200 nm, simplifying synthesis, and improving long-term stability. Overall, advances in low-bandgap molecular design and device engineering continue to accelerate the practical adoption of NIR-OPDs
Отечественная разработка и изготовление
The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Germanium (Ge)-based photonic integrated circuits in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological substances. Here we review the motivations and the recent developments in this field, from the different material platforms to active and nonlinear devices. We also discuss a few demonstrations of sensing that have already been conducted, attesting the potential applications of such devices. Finally, we conclude by discussing the challenges that have to be solved to transition from lab demonstrations to practical industrial devices.
Based upon significant latent capacity of antimony-containing avalanche photodetectors in comparison with other materials such as Si or GaInAs in certain applications, the material characteristics beginning from ensemble geometric schematics to respective essential features of binary, ternary, and quaternary antimonides, including their applicability and restrictivity, are analyzed and summarized. Under the scope of the separate-absorption–multiplication avalanche photodetector scheme, the options of absorption and multiplication materials mainly concentrated on the benefit of multiplication and coverage of absorption, as well as recommendation of combinations, including grading choices, are discussed. In conjunction with a simple review of previous efforts, overview and prospects on the development of antimonide APDs are presented. Resulting information is also worthy for other types of antimonide devices.
Photodetectors and image sensors, especially in the infrared wavelength regime, are core components of various optical instruments for medical imaging, remote sensing, night vision, and surveillance, etc. The current commercial infrared photodetectors are mostly based on bulk materials including In1- xGaxAs, InSb, Hg1-xCdxTe, etc. Despite continued advancement and high photoelectrical performance, technological factors limit their widespread usage in next-generation photodetectors, especially, the need for cooling, and the high costs associated with the processing of III-V and II-VI semiconductors. Lowdimensional materials, including zero-dimensional (0D) quantum dots, 1D nanowires, and 2D layered materials, with strong lightmatter coupling coefficient, quantum confinement, and ease of heterostructure construction, are emerged as alternative material platforms for high-performance photodetection technologies at room temperature. This article provides a comprehensive review of the technological evolution, contemporary challenges, and future development trends in infrared detector technologies. First, we systematically analyzed the representative materials and technological features of successive generations of infrared detectors. Then, the discussion focuses on advancements in fourth-generation detector technologies, particularly highlighting breakthroughs in multi-dimensional optical information fusion technology encompassing intensity, polarization, spectral, and phase detection. Finally, drawing on application requirements for neuromorphic vision infrared photodetectors that integrate infrared information acquisition, processing, and intelligent decision-making, the review explores transformative development pathways for next-generation infrared detector technologie